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Articles

Vol. 8 (2021)

Performance Characterization of Dual-Metal Triple- Gate-Dielectric (DM_TGD) Tunnel Field Effect Transistor (TFET)

DOI
https://doi.org/10.31875/2409-9694.2021.08.8
Submitted
March 5, 2022
Published
2021-12-31

Abstract

Abstract: Since, Dual Metal Gate (DMG) technology alone is not enough to rectify the problem of low ON current and large ambipolar current in the TFET, therefore, a novel TFET structure, known as dual metal triple-gate-dielectric (DM_TGD) TFET, has been proposed. We have combined the dielectric and gate material work function engineering to enhance the performance of the conventional FET. In the proposed structure, the gate region is divided into three dielectric materials: TiO2/Al2O3/SiO2. This approach is chosen because high dielectric material alone near the source cannot improve the performance due to increase in fringing fields. This paper presents the detail processing of the proposed structure. We have evaluated and optimized the dc performance of the proposed N-DM_TGD TFET with the help of 2-D ATLAS simulator. The results were compared with those exhibited by dual metal hetero-gate-dielectric TFET, single metal hetero- gate-dielectric TFET and single metal triple-gate-dielectric TFET of identical dimensions. It has been observed that the DM_TGD device offers better transconductance (gm), lower subthreshold slope, lower ambipolar current and larger ON current.

References

  1. D'Agostino F, Quercia D. "Short-channel effects in MOSFETs", Proc. Introduction VLSI Design (EECS 467), pp. 1-15, Dec. 2000.J. Clerk Maxwell, A Treatise on Electricity and Magnetism, Oxford: Clarendon, 1892; 2(3): 68-73.
  2. Chaudhry A, Kumar MJ. "Controlling short-channel effects in deep submicron SOI MOSFET's for improved reliability: A review", IEEE Trans. Device Mater. Rel 2004; 4(1): 99-109. https://doi.org/10.1109/TDMR.2004.824359
  3. M. Ali Pourghaderi, Anh-Tuan Pham, Hesameddin Hatikhameseh, Jongchol Kim, Hong-Hyun Park, Seonghoon Jin, Won-Young Chung, Woosung Choi, Shigenobu Maeda, Keun-Ho Lee, "Universality of Short-Channel Effects on Ultrascaled MOSFET Performance", IEEE Electron Device Letters, 2018; 39(2): 168-171. https://doi.org/10.1109/LED.2017.2784099
  4. Riyadi MA, Suseno JE, Ismail R. "The future of no-planar nanoelectronics MOSFET devices: A revies", J. Applied Science, 2010; 10: 2136-2146. https://doi.org/10.3923/jas.2010.2136.2146
  5. D. Bhattacharya, NK. Jha, "FinFETs: From devices to architectures", Adv. Electron vol. 2014; pp. 1-21. https://doi.org/10.1155/2014/365689
  6. Ravi Shankar Pal, Savitesh Sharma, Sudeb Dasgupta, "Recent trend of FinFET devices and its challenges: A review", 2017 Conference on Emerging devices and Smart Systems (ICEDSS).
  7. JP. Colinge, FinFETs and other Multi-Gate Transistors, New York, NY, USA:Springer Science+ Bussiness Media, 2008. https://doi.org/10.1007/978-0-387-71752-4
  8. SL. Tripathi, R. Mishra, RA. Mishra, "Multi-gate MOSFET structures with high- k dielectric materials", J. Electron Devices 2012; 16: 1388-1394.
  9. Jansung Park, Sung-Min Hong, "Simulation study of enhancement mode Multi-Gate vertical Gallium Oxide MOSFETs", ECS journal of Solid State Science and Technology 2019; 8(7): Q3116-Q3121. https://doi.org/10.1149/2.0181907jss
  10. Lu W, Xie P, Lieber CM. "Nanowire transistor performance limits and applications", IEEE Trans. Electron Devices 2008; 55(11): 2859-2876. https://doi.org/10.1109/TED.2008.2005158
  11. Su PC, Chen BH, Lee YC, Yang YS. "Silicon Nanowire Field-Effect Transistor as Biosensing Platforms for Post-Translational Modification", Biosensors, 2020; 10: pp. 213. https://doi.org/10.3390/bios10120213
  12. Chang SM, Palanisamy S, Wu TH, et al. " Utilization of silicon nanowire field-effect transistors for the detection of a cardiac biomarker, cardiac troponin I and their applications involving animal models", Sci Rep 2020; 10: pp. 22027. https://doi.org/10.1038/s41598-020-78829-7
  13. Choi WY, Park BG, Lee JD, Liu TJK. "Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec", IEEE Electron Device Lett 2007; 28(8): 743-745. https://doi.org/10.1109/LED.2007.901273
  14. Priya GL, Venkatesh M, Balamurugan NB. et al. Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System. Silicon 2021; 13: 1691-1702. https://doi.org/10.1007/s12633-021-01075-7
  15. Avci UE, Morris DH, Young IA. "Tunnel field-effect transistors: Prospects and challenges", IEEE J. Electron Devices Soc 2015; 3(3): 88-95. https://doi.org/10.1109/JEDS.2015.2390591
  16. Reddy NN, Panda DK. A Comprehensive Review on Tunnel Field- Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity. Silicon, 2020. https://doi.org/10.1007/s12633-020-00657-1
  17. HW. Kim et al., "A tunneling field-effect transistor using side metal gate/high-k material for low power application," 2011 International Semiconductor Device Research Symposium (ISDRS), 2011; pp. 1-2.
  18. Anne Verhulst, Karen Maex, Guido Groeseneken, "Tunnel-Field Effect transistor without gate-drain overlap", Applied Physics Letters, 2007; 91(5). https://doi.org/10.1063/1.2757593
  19. Choi WY, Lee HK. "Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)", Nano Converg 2016; 3(1): 1-15. https://doi.org/10.1186/s40580-016-0073-y
  20. M. Shunqukela and VM. Srivastava, "Dielectric Material (HfO2) Effect on Surface Potential for CSDG MOSFET," 2018 International Conference on Computer Communication and Informatics (ICCCI), 2018; pp. 1-5. https://doi.org/10.1109/ICCCI.2018.8441369
  21. Y. Zhang, W. Lin, Y. Li, K. Ding, and JQ. Li, "A theoretical study on the electronic structures of TiO2: effect of Hartree-Fock exchange," Journal of Physical Chemistry B 2005; 09(41): 19270-19277. https://doi.org/10.1021/jp0523625
  22. Bonkerud J, Zimmermann C, Weiser PM. et al. On the permittivity of titanium dioxide. Sci Rep 2021; 11: pp. 12443. https://doi.org/10.1038/s41598-021-92021-5
  23. Raborty KY. Raj, AK. Pradhan, B. Chatterjee, S. Chakravorti, S. Dalai, "Investigation of Dielectric Properties of TiO2 and Al2O3 nanofluids by Frequency Domain.
  24. Ajay Kumar Singh, and Tan Chun Fui, "Dual Metal Triple-gate- dielectric (DM_TGD) Tunnel Field Effect Transistor: A Novel Structure for Future Energy Efficient Device" Recent Advances in Electrical and Electronic Engineering (EENG), 2021; 6.
  25. Krauss T, Wessely F, Schwalke U. "Eletrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS", 13th International Multi-Conference on Systems Signals & Devices, 2016. https://doi.org/10.1109/SSD.2016.7473724
  26. Paul A, Saha P and Malakar TD. "Study of Device Performance of Dual Metal Gate Silicon on Insulator MOSFET Adopting Various Dielectric Materials in Gate Oxide," 2020 IEEE VLSI Device Circuit and System (VLSI DCS), 2020; pp. 229-233. https://doi.org/10.1109/VLSIDCS47293.2020.9179873